WNM2046 mosfet equivalent, n-channel mosfet.
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small packag.
D
GS
Pin configuration (Top view)
6 = Device Code * = Month (A~Z)
Marking
* Small Signal Switching
* Small Mot.
DFN1006-3L
The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charg.
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