WNM2016 mosfet equivalent, n-channel mosfet.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
SOT-23
D 3.
Standard Product WNM2016 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON res.
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Stand.
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