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WNM2046B Datasheet MOSFET

Manufacturer: WillSEMI

Datasheet Details

Part number WNM2046B
Manufacturer WillSEMI
File Size 1.37 MB
Description MOSFET
Datasheet download datasheet WNM2046B Datasheet

General Description

s DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Overview

WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046B Http://www.sh-willsemi.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN1006-3L.