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WNMD2182 Datasheet MOSFET

Manufacturer: WillSEMI

Datasheet Details

Part number WNMD2182
Manufacturer WillSEMI
File Size 734.32 KB
Description MOSFET
Datasheet download datasheet WNMD2182 Datasheet

General Description

s The WNMD2182 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Overview

WNMD2182 WNMD2182 Dual N-Channel, 20V, 9.5A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) (mΩ) 12@ VGS=4.5V 20 14@ VGS=3.1V 17@ VGS=2.5V ESD HBM 2000V PDFN2.9×2.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN2.9×2.8-8L.
  • ESD Protected Class-2 (HBM 2000V).