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WNMD2180 Datasheet MOSFET

Manufacturer: WillSEMI

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Datasheet Details

Part number WNMD2180
Manufacturer WillSEMI
File Size 2.27 MB
Description MOSFET
Datasheet download datasheet WNMD2180 Datasheet

General Description

s The WNMD2180 is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Overview

WNMD2180 Dual N-Channel, 20V, 11A, Power MOSFET VDS (V) 20 Typical Rds(on) (mΩ) 8.5@ VGS=4.5V 8.9@ VGS=3.8V 9.6@ VGS=3.1V 11@ VGS=2.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN3×3-8L.

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