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WNMD2178 Datasheet MOSFET

Manufacturer: WillSEMI

Datasheet Details

Part number WNMD2178
Manufacturer WillSEMI
File Size 1.51 MB
Description MOSFET
Datasheet download datasheet WNMD2178 Datasheet

General Description

s The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.

Uses advanced trench technology and design to provide excellent RSS(ON) with low gate charge.

This device is designed for Lithium-Ion battery protection circuit.

Overview

WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 26@ VGS=3.1V 29@ VGS=2.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN2X2-4L 34 2 1 Bottom View DFN2X2-4L 43 S2 G2 2178 NDYW S1 G1 12 4: Source 2 3: Gate 2 1: Source 1 2: Gate 1 2178 = Device Code N D =Special Code.