Datasheet4U Logo Datasheet4U.com

WNM3025 - MOSFET

Description

The WNM3025 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • GS.
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package DFN1006-3L.

📥 Download Datasheet

Datasheet Details

Part number WNM3025
Manufacturer WillSEMI
File Size 1.43 MB
Description MOSFET
Datasheet download datasheet WNM3025 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WNM3003 N-Channel MOSFET Will Semiconductor
WNM3003 N-Channel MOSFET TY Semiconductor
WNM3008 N-Channel MOSFET Will Semiconductor
WNM3008 N-Channel MOSFET TY Semiconductor
WNM3011 N-Channel MOSFET Will Semiconductor

Other Datasheets by WillSEMI

Part Number Description
WNM3017 MOSFET
WNM3018 MOSFET
WNM3019 MOSFET
WNM3030 Single N-Channel Power MOSFET
WNM3057B Single N-Channel 30V 80A Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3025 is Pb-free.
Published: |