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WNM3008 - N-Channel MOSFET

General Description

The WNM3008 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • SOT-23 D 3 12 GS Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23.

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Datasheet Details

Part number WNM3008
Manufacturer Will Semiconductor
File Size 121.44 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM3008 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V WNM3008 Http//:www.willsemi.com Descriptions The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3008 is Pb-free. Features SOT-23 D 3 12 GS Pin configuration (Top view) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc.