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WNM3003 - N-Channel MOSFET

General Description

The WNM3003 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Key Features

  • SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT3.
  • WT3.
  • = Device Code = Month (A~Z) Marking.

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Datasheet Details

Part number WNM3003
Manufacturer Will Semiconductor
File Size 340.63 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM3003 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3003 N-Channel, 30V, 4.0A, Power MOSFET WNM3003 Http://www.willsemi.com V(BR)DSS 30V Rds(on) (Ÿ) 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3003 is Pb-free. Features SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT3* WT3 * = Device Code = Month (A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc.