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BTA308Y-800C0T Datasheet Preview

BTA308Y-800C0T Datasheet

3Q Hi-Com Triac

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BTA308Y-800C0T
3Q Hi-Com Triac
Rev.02 - 6 February 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (IITO-220) internally
insulated plastic package. This triac is intended for use in motor control circuits where high blocking
voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will
commutate the full rated RMS current at the maximum rated junction temperature without the aid
of a snubber. This device has high operating capability (Tj(max) = 150 °C) and an internally isolated
mounting base.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High immunity to false turn-on by dV/dt
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Internally insulated package
Isolated mounting base with 2500 V (RMS) isolation
3. Applications
Applications subject to high temperature (Tj(max) = 150 °C)
Compressor starting control circuits
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM non-repetitive peak on-
state current
Tj junction temperature
Conditions
full sine wave; Tmb ≤ 121 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
Values
800
8
60
65
150
Unit
V
A
A
A
°C




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BTA308Y-800C0T Datasheet Preview

BTA308Y-800C0T Datasheet

3Q Hi-Com Triac

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WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform;
gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/μs; gate open circuit;
snubberless condition
BTA308Y-800C0T
3Q Hi-Com Triac
Min Typ Max Unit
5-
35 mA
5-
35 mA
5-
35 mA
- - 50 mA
- 1.3 1.65 V
2000 - - V/μs
1500 - - V/μs
7 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1
main terminal 1
2 T2
main terminal 2
3G
mb n.c
gate
mounting base; isolated
Simplified outline
Graphic symbol
T2
sym051
T1
G
1 23
IITO-220 (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA308Y-800C0T
IITO-220 Plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3 leads TO-220
Version
IITO-220E
7. Marking
Table 4. Marking codes
Type number
BTA308Y-800C0T
BTA308Y-800C0T
Product data sheet
Marking codes
BTA308Y-800C0T
All information provided in this document is subject to legal disclaimers.
6 February 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 12


Part Number BTA308Y-800C0T
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 12 Pages
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