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BTA308S-800ET Datasheet

3Q Hi-Com Triac

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BTA308S-800ET
3Q Hi-Com Triac
14 July 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO252 (DPAK) surface mountable
plastic package. This triac balances the requirements of commutation performance and
gate sensitivity and is intended for interfacing with low power drivers and logic ICs including
microcontrollers. This "series ET" triac will commutate the full rated RMS current at the maximum
rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.
2. Features and benefits
High voltage capability
High commutation capability with maximum false trigger immunity
Direct interfacing with low level power drivers and logic ICs
High junction operating temperature capability (Tj(max) = 150 °C)
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Sensitive gate for easy logic level triggering
Surface mountable package
3. Applications
Compressor starting control circuits
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
Applications subject to high temperature (Tj(max) = 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 131 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 800 V
- - 8A
- - 60 A
- - 65 A
- - 150 °C
- - 10 mA




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BTA308S-800ET Datasheet Preview

BTA308S-800ET Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA308S-800ET
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; snubberless
condition; gate open circuit; Fig. 12
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
- - 10 mA
- - 10 mA
- - 30 mA
- 1.3 1.65 V
400 - - V/µs
200 - - V/µs
3 - - A/ms
4 - - A/ms
6 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
2
13
DPAK (TO252N)
Graphic symbol
T2
sym051
T1
G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA308S-800ET
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
TO252N
BTA308S-800ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
2 / 13


Part Number BTA308S-800ET
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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