900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WeEn

BTA308X-800B0 Datasheet Preview

BTA308X-800B0 Datasheet

3Q Hi-Com Triac

No Preview Available !

BTA308X-800B0
3Q Hi-Com Triac
26 December 2016
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This triac is intended for use in motor control circuits where high blocking voltage, high static and
dynamic dV/dt as well as high dIcom/dt can occur. This "series B0" triac will commutate the full
rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Isolated mounting base package
Optimized for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
High voltage capability
3. Applications
Compressor starting control circuits
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 75 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 800 V
- - 8A
- - 60 A
- - 65 A
- - 125 °C
10 -
50 mA




WeEn

BTA308X-800B0 Datasheet Preview

BTA308X-800B0 Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA308X-800B0
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 12
Min Typ Max Unit
10 -
50 mA
10 -
50 mA
- - 60 mA
- 1.3 1.65 V
2000 4000 -
V/µs
15 25 -
A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA308X-800B0
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
7. Marking
Table 4. Marking codes
Type number
BTA308X-800B0
Marking code
BTA308X-800B0
BTA308X-800B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 December 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
2 / 13


Part Number BTA308X-800B0
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
PDF Download

BTA308X-800B0 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BTA308X-800B0 3Q Hi-Com Triac
WeEn





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy