2N60I mosfet equivalent, n-channel power mosfet.
* 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
* Low gate charge * Low Crss
1 GATE
* Fast switching
* Improved dv/dt capability
3 SOURCE
DRAIN SOURCE VOLTAGE 600 VOLTAG.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s.
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