2N60-E mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
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in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.
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