2N60-F datasheet, mosfet equivalent, UTC

Features and benefits

* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL 2.Drain 1 TO-251 1 T.

Application

in switching power supplies and adaptors.
* FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capabilit.

Description

The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.

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