TSHG8200 diode equivalent, high speed infrared emitting diode.
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* Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm.
* Infrared radiation source for operation with CMOS cameras (illumination)
* High speed IR data transmission
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
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APPLICATIONS
* Infrared radiation source for operation with CMOS came.
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