TSHG5210 diode equivalent, high speed infrared emitting diode.
* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength:
*p = 850 nm
* High reliabili.
in
* Infrared radiation source for operation with CMOS cameras
* High speed IR data transmission
* Smoke-a.
TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
* Package type: leaded
* Package form: T-1¾
* Dimension.
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