TSHG5510 diode equivalent, high speed infrared emitting diode.
* Package type: leaded
* Package form: T-1¾
* Dimensions (in mm): Ø 5
* Leads with stand-off
* Peak wavelength: λp = 830 nm
* High reliability
* Infrared radiation source for operation with CMOS
cameras (illumination)
* High speed IR data transmission
PR.
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
* Package type: leaded
* Package form: T-1¾
* Dimensions.
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