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Si4831DY Datasheet

P-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4831DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.045 @ VGS = –10 V
0.090 @ VGS = –4.5 V
ID (A)
"5
"3.5
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
Vf (V)
Diode Forward Voltage
0.53 V @ 3 A
IF (A)
3
A1
A2
S3
G4
SO-8
Top View
8K
7K
6D
5D
S
G
K
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
–30
30
"20
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"5
"3.9
"20
–1.7
3
20
2
1.28
1.83
1.17
–55 to 150
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Unit
V
A
W
_C
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

Si4831DY Datasheet

P-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4831DY
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
52
56
82
91
27
32
Maximum
62.5
68
100
110
33
40
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V, TJ = 75_C
VDS w –5 V, VGS = –10 V
VGS = –10 V, ID = –5 A
VGS = –4.5 V, ID = –3.5 A
VDS = –15 V, ID = –5 A
IS = –1.7 A, VGS = 0 V
–1.0
–20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –15 V, VGS = –5 V, ID = –5 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –1.7 A, di/dt = 100 A/ms
Typ
0.036
0.060
9
–0.75
10
4.5
3.6
13
15
37
14
35
Max Unit
"100
–1
–10
0.045
0.090
–1.2
V
nA
mA
A
W
S
V
20
nC
25
30
70 ns
30
70
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 3 A
IF = 3 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 75_C
Vr = 30 V, TJ = 125_C
Vr = 15 V
www.vishay.com S FaxBack 408-970-5600
2-2
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.47
0.1
5
20
Unit
V
mA
pF
Document Number: 71061
S-61859—Rev. A, 10-Oct-99


Part Number Si4831DY
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 6 Pages
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