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SI4833DY Datasheet

P-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4833DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.085 @ VGS = –10 V
0.180 @ VGS = –4.5 V
ID (A)
"3.5
"2.5
SCHOTTKY PRODUCT SUMMARY
VKA (V)
30
VF (V)
Diode Forward Voltage
0.5 V @ 1.0 A
IF (A)
1.4
SO-8
A1
A2
S3
G4
8K
7K
6D
5D
Top View
S
G
D
K
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
–30
30
"20
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"3.5
"2.8
"20
– 1.7
1.4
30
2
1.3
1.9
1.2
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
Device
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
Typical
90
92
Maximum
62.5
65
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4833DY Datasheet

P-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4833DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V, TJ = 55_C
VDS w –5 V, VGS = –10 V
VGS = –10 V, ID = –2.5 A
VGS = –4.5 V, ID = –1.8 A
VDS = –10 V, ID = –2.5 A
IS = –1.7 A, VGS = 0 V
–1.0
–15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –10 V, VGS = –10 V, ID = –2.5 A
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –1.7 A, di/dt = 100 A/ms
Typ
0.066
0.125
5.0
–0.8
8.7
1.9
1.3
7
9
14
8
50
Max Unit
"100
–1
–25
0.085
0.180
–1.2
V
nA
mA
A
W
S
V
15
nC
15
18
27 ns
15
80
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 1.0 A
IF = 1.0 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 100_C
Vr = –30 V, TJ = 125_C
Vr = 10 V
Typ
0.45
0.36
0.004
0.7
3.0
62
Max
0.5
0.42
0.100
10
20
Unit
V
mA
pF
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70796
S-56941—Rev. B, 02-Nov-98


Part Number SI4833DY
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 5 Pages
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