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Vishay Intertechnology Electronic Components Datasheet

SI4830DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4830DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
30 0.50 V @ 1.0 A
ID (A)
7.5
6.5
IF (A)
2.0
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4830DY
Si4830DY-T1 (with Tape and Reel)
D1 D1
D2 D2
G1
Schottky Diode
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
7.5 5.7
6.0 4.6
30
1.7 0.9
2.0 1.1
1.3 0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
MOSFET
Typ Max
52 62.5
93 110
35 40
Schottky
Typ Max
53 62.5
93 110
35 40
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4830DY Datasheet

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

No Preview Available !

Si4830DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
VDS = 15 V, ID = 7.5 A
IS = 1 A, VGS = 0 V
0.8
Ch-1
Ch-2
Ch-1
Ch-2
20
Ch-1
Ch-2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 10 V, ID = 7.5 A
0.5
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Ch-1
Ch-2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typa
0.018
0.024
22
0.8
0.47
13
2
2.7
8
10
21
10
40
32
Max Unit
"100
1
100
15
2000
0.022
0.030
1.2
0.5
V
nA
mA
A
W
S
V
20
nC
3.2 W
16
20
40
20 ns
80
70
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 1.0 A
IF = 1.0 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 100_C
Vr = - 30 V, TJ = 125_C
Vr = 10 V
Typ
0.47
0.36
0.004
0.7
3.0
50
Max
0.50
0.42
0.100
10
20
Unit
V
mA
pF
www.vishay.com
2
Document Number: 71161
S-31989—Rev. C, 13-Oct-03


Part Number SI4830DY
Description Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Maker Vishay Siliconix
Total Page 5 Pages
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