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Si3853DV Datasheet

P-Channel 20-V (D-S) MOSFET With Schottky Diode

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New Product
Si3853DV
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
–20
rDS(on) (W)
0.200 @ VGS = –4.5 V
0.340 @ VGS = –2.5 V
ID (A)
"1.8
"1.3
SCHOTTKY PRODUCT SUMMARY
VKA (V)
20
Vf (v)
Diode Forward Voltage
0.48 V @ 0.5 A
IF (A)
0.5
A
3 mm S
G
TSOP-6
Top View
16
25
34
2.85 mm
K
N/C
D
S
G
K
D
P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
VDS
VKA
VGS
–20
20
"12
"12
Continuous Drain Current (TJ = 150_C) (MOSFET)a
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
"1.8
"1.5
–1.05
1.15
0.73
1.0
0.64
"7
0.5
7
–55 to 150
"1.6
"1.2
–0.75
0.83
0.53
0.76
0.48
Notes
a. Surface Mounted on 1” x1” FR4 Board.
Unit
V
A
W
_C
Document Number: 70979
S-61846—Rev. A, 04-Oct-99
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

Si3853DV Datasheet

P-Channel 20-V (D-S) MOSFET With Schottky Diode

No Preview Available !

Si3853DV
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
93
103
130
140
75
80
Maximum
110
125
150
165
90
95
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "12 V
VDS = –16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V, TJ = 75_C
VDS w –5 V, VGS = –4.5 V
VGS = –4.5 V, ID = –1.8 A
VGS = –2.5 V, ID = –1.0 A
VDS = –5 V, ID = –1.8 A
IS = –1.05 A, VGS = 0 V
–0.5
–5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = –10 V, VGS = –4.5 V, ID = –1.8 A
VDD = –10 V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
IF = –1.05 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ
0.160
0.280
3.6
–0.83
2.7
0.4
0.6
11
34
19
24
20
Max Unit
"100
–1
–10
0.200
0.340
–1.10
V
nA
mA
A
W
S
V
4.0
nC
17
50
30 ns
36
40
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
Irm
CT
IF = 0.5 A
IF = 0.5 A, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 75_C
Vr = 20 V, TJ = 125_C
Vr = 10 V
www.vishay.com S FaxBack 408-970-5600
2-2
Typ
0.42
0.33
0.002
0.06
1.5
31
Max
0.48
0.4
0.100
1
10
Unit
V
mA
pF
Document Number: 70979
S-61846—Rev. A, 04-Oct-99


Part Number Si3853DV
Description P-Channel 20-V (D-S) MOSFET With Schottky Diode
Maker Vishay Siliconix
Total Page 6 Pages
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