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Specification Comparison
Vishay Siliconix
Si3850ADV vs. Si3850DV
Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical
Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 ± 12 ± 12 1.4 - 0.96 1.1 - 0.77 3.5 - 2.0 0.9 - 0.9 1.08 0.7 - 55 to 150 115 Si3580DV 20 - 20 ± 12 ± 12 1.2 - 0.
SI3850DV Datasheet
