SI3850DV - Complementary MOSFET Half-Bridge (N- and P-Channel)

Vishay

Datasheet Details

Part number	SI3850DV
Manufacturer	Vishay
File Size	74.78 KB
Description	Complementary MOSFET Half-Bridge (N- and P-Channel)
Datasheet	SI3850DV Datasheet

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Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.500 @ VGS = 4.5 V 0.750 @ VGS = 3.0 V 1.00 @ VGS = –4.5 V 1.30 @ VGS = –3.0 V ID (A) "1.2 "1.0 "0.85 "0.75 P-Channel –20 S2 TSOP-6 Top View G1 D G2 1 6 S1 D D 2 5 G2 3 4 S2 G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "12 "1.2 "0.95 "3.5 1 1.25 0.

Published: Apr 8, 2005 |