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Vishay Intertechnology Electronic Components Datasheet

Si2301BD Datasheet

P-Channel 2.5-V (G-S) MOSFET

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P-Channel 2.5-V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = - 4.5 V
- 20 0.150 @ VGS = - 2.5 V
ID (A)b
- 2.4
- 2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301 BDS (L1)*
*Marking Code
Ordering Information: Si2301BDS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 2.4
- 1.9
- 0.72
0.9
0.57
- 20
"8
- 10
- 55 to 150
- 2.2
- 1.8
- 0.6
0.7
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
Typical
120
140
Maximum
145
175
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

Si2301BD Datasheet

P-Channel 2.5-V (G-S) MOSFET

No Preview Available !

Si2301BDS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VGS = 0 V, ID = - 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55_C
VDS v - 5 V, VGS = - 4.5 V
VDS v - 5 V, VGS = - 2.5 V
VGS = - 4.5 V, ID = - 2.8 A
VGS = - 2.5 V, ID = - 2.0 A
VDS = - 5 V, ID = - 2.8 A
IS = - 0.75 A, VGS = 0 V
VDS = - 6 V, VGS = - 4.5 V
ID ^ - 2.8 A
VDS = - 6 V, VGS = 0, f = 1 MHz
VDD = - 6 V, RL = 6 W
ID ^ - 1.0 A, VGEN = - 4.5 V
RG = 6 W
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600
Limits
Min Typ Max
Unit
- 20
- 0.45
-6
-3
0.080
0.110
6.5
- 0.80
- 0.95
"100
-1
- 10
0.100
0.150
- 1.2
V
nA
mA
A
W
S
V
4.5 10
0.7
1.1
375
95
65
nC
pF
20 30
40 60
30 45
20 30
ns
www.vishay.com
2
Document Number: 72066
S-31990—Rev. B, 13-Oct-03


Part Number Si2301BD
Description P-Channel 2.5-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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