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SI2301BDS Datasheet

P-Channel 2.5-V (G-S) MOSFET

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P-Channel 2.5 V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 20 0.100 at VGS = - 4.5 V
0.150 at VGS = - 2.5 V
ID (A)b
- 2.4
- 2.0
TO-236
(SOT-23)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
G1
S2
3D
Top View
Si2301 BDS (L1)*
* Marking Code
Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free)
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
ID
- 2.4
- 1.9
- 2.2
- 1.8
Pulsed Drain Currenta
IDM - 10
Continuous Source Current (Diode Conduction)b
IS
- 0.72
- 0.6
Power Dissipationb
TA = 25 °C
TA = 70 °C
PD
0.9
0.57
0.7
0.45
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t 5 s.
c. Surface mounted on FR4 board.
Symbol
RthJA
Typical
120
140
Maximum
145
175
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72066
www.vishay.com
S11-2044-Rev. F, 17-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SI2301BDS Datasheet

P-Channel 2.5-V (G-S) MOSFET

No Preview Available !

Si2301BDS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VDS - 5 V, VGS = - 2.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS - 4.5 V, ID = - 2.8 A
VGS = - 2.5 V, ID = - 2 A
Forward Transconductancea
gfs VDS = - 5 V, ID = - 2.8 A
Diode Forward Voltage
VSD IS = - 0.75 A, VGS = 0 V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = - 6 V, VGS = - 4.5 V
ID - 2.8 A
Qgd
Gate Resistance
Rg f = 1 MHz
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Switchingc
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 6 V, RL = 6
ID - 1 A, VGEN = - 4.5 V
Rg = 6
Notes:
a. Pulse test: pulse width 300 µs duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Min.
Limits
Typ.
Max.
- 20
- 0.45
-6
-3
0.080
0.110
6.5
- 0.80
- 0.95
± 100
-1
- 10
0.100
0.150
- 1.2
Unit
V
nA
µA
A
S
V
4.5 10
0.7 nC
1.1
2 8 16
375
95 pF
65
20 30
40 60
ns
30 45
20 30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 72066
2 S11-2044-Rev. F, 17-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SI2301BDS
Description P-Channel 2.5-V (G-S) MOSFET
Maker Vishay Siliconix
Total Page 9 Pages
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