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SI4936ADY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

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Dual N-Channel 30-V (D-S) MOSFET
Si4936ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.036 at VGS = 10 V
0.053 at VGS = 4.5 V
ID (A)
5.9
4.9
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free)
Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
5.9 4.4
4.7 3.6
Pulsed Drain Current
IDM ± 30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 71132
S09-0869-Rev. D, 18-May-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4936ADY Datasheet

Dual N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4936ADY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.9 A
VGS = 4.5 V, ID = 4.9 A
Forward Transconductancea gfs VDS = 15 V, ID = 5.9 A
Diode Forward Voltagea
VSD IS = 1.7 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 10 V, ID = 5.9 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1.0
30
Typ.
Max.
3.0
± 100
1
5
0.032
0.042
15
0.8
0.036
0.053
1.2
Unit
V
nA
µA
A
Ω
S
V
13 20
2.3 nC
2.0
6 12
14 25
30 60 ns
5 10
30 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V thru 5 V
4V
24
30
24
18 18
12
6 3V
2V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
12
6
0
0
TC = - 55 °C
25 °C
125 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
www.vishay.com
2
Document Number: 71132
S09-0869-Rev. D, 18-May-09


Part Number SI4936ADY
Description Dual N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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