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Vishay Intertechnology Electronic Components Datasheet

SI4933DY Datasheet

Dual P-Channel 12-V (D-S) MOSFET

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Si4933DY
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.014 @ VGS = -4.5 V
-12 0.017 @ VGS = -2.5 V
0.022 @ VGS = -1.8 V
ID (A)
-9.8
- 8.9
- 7.8
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
-12
"8
- 9.8
-7.4
-7.8 -5.9
-30
-1.7 -0.9
2.0 1.1
1.3 0.7
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 71980
S-22122β€”Rev. B, 25-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI4933DY Datasheet

Dual P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si4933DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = -500 mA
VDS = 0 V, VGS = "8 V
VDS = -9.6 V, VGS = 0 V
VDS = -9.6 V, VGS = 0 V, TJ = 55_C
VDS = -5 V, VGS = -4.5 V
VGS = -4.5 V, ID = -9.8 A
VGS = -2.5 V, ID = -8.9 A
VGS = -1.8 V, ID = -5.0 A
VDS = -10 V, ID = -9.8 A
IS = -1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 6 V, VGS = -4.5 V, ID = -9.8 A
VDD = 6 V, RL = 6 W
ID ^ -1 A, VGEN = -4.5 V, RG = 6 W
IF = -1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-0.40
-30
-1.0
"100
-1
-5
0.0115
0.014
0.018
40
-0.7
0.014
0.017
0.022
-1.2
V
nA
mA
A
W
S
V
46 70
6.0 nC
13
35 55
47 70
320 480 ns
260 390
210 315
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
VGS = 5 thru 2 V
1.5 V
1V
1234
VDS - Drain-to-Source Voltage (V)
5
Transfer Characteristics
30
24
18
12
6
0
0.0
TC = 125_C
25_C
-55 _C
0.4 0.8 1.2 1.6
VGS - Gate-to-Source Voltage (V)
2.0
Document Number: 71980
S-22122β€”Rev. B, 25-Nov-02


Part Number SI4933DY
Description Dual P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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