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Vishay Intertechnology Electronic Components Datasheet

SI4931DY Datasheet

Dual P-Channel 12-V (D-S) MOSFET

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Si4931DY
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.018 @ VGS = 4.5 V
12 0.022 @ VGS = 2.5 V
0.028 @ VGS = 1.8 V
ID (A)
8.9
8.1
3.6
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4931DY—E3
Si4931DY-T1—E3 (with Tape and Reel)
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
8.9
6.7
7.1
5.4
30
1.7
0.9
2.0 1.1
1.3 0.7
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
46
80
24
Maximum
62.5
110
32
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4931DY Datasheet

Dual P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si4931DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 350 mA
VDS = 0 V, VGS = "8 V
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 8.9 A
VGS = 2.5 V, ID = 8.1 A
VGS = 1.8 V, ID = 3.6 A
VDS = 6 V, ID = 8.9 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 6 V, VGS = 4.5 V, ID = 8.9 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.4
30
1.0
"100
1
5
0.0145
0.018
0.023
26
0.7
0.018
0.022
0.028
1.2
V
nA
mA
A
W
S
V
34.5
52
5.1 nC
9.6
9W
25 40
46 70
230 345 ns
155 235
128 200
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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Output Characteristics
VGS = 5 thru 2 V
1.5 V
1V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
30
24
18
12
6
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0
VGS Gate-to-Source Voltage (V)
2.5
Document Number: 72379
S-32411—Rev. B, 24-Nov-03


Part Number SI4931DY
Description Dual P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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