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Vishay Intertechnology Electronic Components Datasheet

SI4882DY Datasheet

N-Channel Reduced Qg/ Fast Switching MOSFET

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New Product
Si4882DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0105 @ VGS = 10 V
0.0205 @ VGS = 4.5 V
ID (A)
"11
"8
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
DD DD
G
N-Channel MOSFET
S SS
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70 _C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"25
"11
"9
"50
2.3
2.5
1.6
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 70878
S-00271—Rev. A, 26-Apr-99
t v 10 sec
Steady State
Symbol
RthJA
RthJF
Typical
35
68
19
Maximum
50
80
25
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4882DY Datasheet

N-Channel Reduced Qg/ Fast Switching MOSFET

No Preview Available !

Si4882DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 11 A
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 11 A
IS = 2.3 A, VGS = 0 V
1.0
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 5.0 V, ID = 11 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Typ Max Unit
"100
1
5
0.0087
0.017
26
0.70
0.0105
0.0205
1.1
V
nA
mA
A
W
S
V
13.5
17
3.9 nC
6.0
13 20
8 12
45 68 ns
19 30
40 70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 5 V
40
30
4V
20
10
0
0
3V
2468
VDS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
10
Transfer Characteristics
50
40
30
20
10
0
0
TC = 125_C
25_C
–55_C
1234
VGS – Gate-to-Source Voltage (V)
5
Document Number: 70878
S-00271—Rev. A, 26-Apr-99


Part Number SI4882DY
Description N-Channel Reduced Qg/ Fast Switching MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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