Si4880DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 13 A
IS = 2.3 A, VGS = 0 V
0.8
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5.0 V, ID = 13 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Typ Max Unit
"100
1
5
0.0069
0.0115
26
0.70
0.0085
0.014
1.1
V
nA
mA
A
W
S
V
19.5
25
4.2 nC
8.8
14 22
9 15
46 70 ns
30 45
35 70
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70857
S-60711—Rev. A, 01-Feb-99
