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SI4884 - FET

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: SI4884 in SOT96-1 (SO8).

Features

  • s Low on-state resistance s Fast switching. 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SI4884 TrenchMOS™ logic level FET M3D315 Rev. 02 — 12 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 (SO8). 1.2 Features s Low on-state resistance s Fast switching. 1.3 Applications s DC to DC converters s Portable equipment applications. 1.4 Quick reference data s VDS = 30 V s Ptot = 2.5 W s ID = 12 A s RDSon = 16.5 mΩ. 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) gate (g) drain (d) g 1 Top view 4 MBK187 Simplified outline 8 5 Symbol d MBB076 s SOT96-1 (SO8) Philips Semiconductors SI4884 TrenchMOS™ logic level FET 3.
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