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SI4884 Datasheet

TrenchMOS logic level FET

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SI4884
TrenchMOS™ logic level FET
M3D315 Rev. 02 — 12 April 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
SI4884 in SOT96-1 (SO8).
1.2 Features
s Low on-state resistance
s Fast switching.
1.3 Applications
s DC to DC converters
s Portable equipment applications.
1.4 Quick reference data
s VDS = 30 V
s Ptot = 2.5 W
s ID = 12 A
s RDSon = 16.5 m.
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1, simplified outline and symbol
Description
Simplified outline
source (s)
gate (g)
85
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s


NXP Semiconductors Electronic Components Datasheet

SI4884 Datasheet

TrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
VGS gate-source voltage
ID drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tj = 25 to 150 °C
Tsp = 25 °C; Figure 2 and 3
Tsp = 25 °C; pulsed; Figure 3
Tsp = 25 °C; Figure 1
IS
source (diode forward) current
Tsp = 25 °C
SI4884
TrenchMOS™ logic level FET
Min Max Unit
- 30 V
- ±20 V
- 12 A
- 45 A
- 2.5 W
55 +150 °C
55 +150 °C
- 12 A
9397 750 09582
Product data
Rev. 02 — 12 April 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12


Part Number SI4884
Description TrenchMOS logic level FET
Maker NXP
Total Page 12 Pages
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