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Vishay Intertechnology Electronic Components Datasheet

SI4559EY Datasheet

N- and P-Channel 60-V (D-S) MOSFET

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Si4559EY
Vishay Siliconix
N- and P-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
60
0.055 at VGS = 10 V
0.075 at VGS = 4.5 V
P-Channel
- 60
0.120 at VGS = - 10 V
0.150 at VGS = - 4.5 V
ID (A)
± 4.5
± 3.9
± 3.1
± 2.8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free)
Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 60 - 60
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 70 °C
ID
± 4.5
± 3.8
± 3.1
± 2.6
Pulsed Drain Current
IDM
± 30
± 30
Continuous Source Current (Diode Conduction)a
IS 2.0 - 2.0
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.4
1.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4559EY Datasheet

N- and P-Channel 60-V (D-S) MOSFET

No Preview Available !

Si4559EY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 60 V, VGS = 0 V
VDS = - 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS = - 60 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VDS - 5 V, VGS = - 10 V
VGS = 10 V, ID = 4.5 A
VGS = - 10 V, ID = - 3.1 A
VGS = 4.5 V, ID = 3.9 A
VGS = - 4.5 V, ID = - 2.8 A
VDS = 15 V, ID = 4.5 A
VDS = - 15 V, ID = - 3.1 A
IS = 2.0 A, VGS = 0 V
IS = - 2.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 30 V, VGS = 10 V, ID = 4.5 A
Qgs P-Channel
VDS = - 30 V, VGS = - 10 V
Qgd ID = - 3.1 A
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 30 V, RL = 30 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 30 V, RL = 30 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
IF = 2 A, dI/dt = 100 A/µs
IF = - 2 A, dI/dt = 100 A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
1
-1
20
- 20
Typ.a Max. Unit
0.045
0.100
0.055
0.125
13
7.5
0.9
- 0.8
± 100
± 100
2
-2
25
- 25
0.055
0.120
0.075
0.150
1.2
- 1.2
V
nA
µA
A
Ω
S
V
19 30
16 25
4
nC
4
3
1.6
13 20
8 15
11 20
10 20
36 60
12 25 ns
11 20
35 50
35 60
60 90
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09


Part Number SI4559EY
Description N- and P-Channel 60-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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