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Vishay Intertechnology Electronic Components Datasheet

SI4500BDY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

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Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
20
rDS(on) (W)
0.020 @ VGS = 4.5 V
0.030 @ VGS = 2.5 V
0.060 @ VGS = 4.5 V
0.100 @ VGS = 2.5 V
ID (A)
9.1
7.5
5.3
4.1
FEATURES
D TrenchFETr Power MOSFET
S1 1
G1 2
S2 3
G2 4
SO-8
8D
7D
6D
5D
G2
Top View
Ordering Information:
Si4500BDY
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G1
S2
D
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
10 sec.
9.1
7.3
2.1
2.5
1.6
Steady State 10 sec.
20
"12
6.6
5.3
5.3 4.9
30
1.1 2.1
1.3 2.5
0.8 1.6
55 to 150
Steady State
20
"12
3.8
3.1
20
1.1
1.3
0.8
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
N-Channel
Typ
40
75
20
Max
50
95
22
P- Channel
Typ
41
75
23
Max
50
95
26
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4500BDY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

No Preview Available !

Si4500BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 20 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 4.5 V
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 9.1 A
VGS = 4.5 V, ID = 5.3 A
VGS = 2.5 V, ID = 3.3 A
VGS = 2.5 V, ID = 1 A
VDS = 15 V, ID = 9.1 A
VDS = 15 V, ID = 5.3 A
IS = 2.1 A, VGS = 0 V
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
Qgs P-Channel
VDS = 10 V, VGS = 4.5 V, ID = 5.3 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
P-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 2.1 A, di/dt = 100 A/ms
IF = 2.1 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
0.6
30
20
1.5
1.5
"100
"100
1
1
5
5
0.016
0.048
0.024
0.082
29
11
0.8
0.8
0.020
0.060
0.030
0.100
1.2
1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11 17
6.0 9
2.5
nC
1.3
3.2
1.6
35 50
20 30
50 80
35 60
31 50
55 85 ns
15 30
35 60
30 60
25 50
www.vishay.com
2
Document Number: 72281
S-41428—Rev. B, 26-Jul-04


Part Number SI4500BDY
Description Complementary MOSFET Half-Bridge (N- and P-Channel)
Maker Vishay Siliconix
Total Page 8 Pages
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