SI4500BDY
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Trench FET® Power MOSFET
- pliant to Ro HS Directive 2002/95/EC
S2
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8D 7D 6D 5D
G2 D
G1
Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
10 s Steady State 10 s Steady State
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a,b
TA = 25 °C TA = 70 °C
9.1 7.3
- 5.3
- 3.8
- 4.9
- 3.1
Pulsed Drain Current
IDM 30
- 20
Continuous Source Current (Diode...
