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Vishay Intertechnology Electronic Components Datasheet

SI4500DY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

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New Product
Si4500DY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.030 @ VGS = 4.5 V
0.040 @ VGS = 2.5 V
0.065 @ VGS = –4.5 V
0.100 @ VGS = –2.5 V
ID (A)
"7.0
"6.0
"4.5
"3.5
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8D
7D
6D
5D
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"12
"7.0
"5.5
"30
1.7
2.5
1.6
–55 to 150
–20
"12
"4.5
"3.5
"20
–1.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
N-Channel
Typ Max
38 50
73 95
17 22
P- Channel
Typ Max
40 50
73 95
20 26
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4500DY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

No Preview Available !

Si4500DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = –250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 16 V, VGS = 0 V
VDS = –16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55_C
VDS = –16 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 4.5 V
VDS = –5 V, VGS = –4.5 V
VGS = 4.5 V, ID = 7.0 A
VGS = –4.5 V, ID = –4.5 A
VGS = 2.5 V, ID = 6.0 A
VGS = –2.5 V, ID = –3.5 A
VDS = 15 V, ID = 7.0 A
VDS = –15 V, ID = –4.5 A
IS = 1.7 A, VGS = 0 V
IS = –1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.5 A
Qgs
P-Channel
VDS = –10 V, VGS = –4.5 V, ID = –4.5 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = –10 V, RL = 10 W
ID ^ 1 A, VGEN = –4.5 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 1.7 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
–0.6
30
–20
"100
"100
1
–1
5
–5
0.022
0.058
0.030
0.087
22
10
0.70
–0.80
0.030
0.065
0.040
0.100
1.2
–1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
13 25
8.5 15
3.0
nC
2.8
3.3
1.7
22 40
15 30
40 80
32 60
50 100
ns
57 100
20 40
40 80
40 80
40 80
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70880
S-00269—Rev. A, 26-Apr-99


Part Number SI4500DY
Description Complementary MOSFET Half-Bridge (N- and P-Channel)
Maker Vishay Siliconix
Total Page 7 Pages
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