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Vishay Intertechnology Electronic Components Datasheet

SI4501DY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

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New Product
Si4501DY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-8
rDS(on) (W)
0.018 @ VGS = 10 V
0.027 @ VGS = 4.5 V
0.042 @ VGS = - 4.5 V
0.060 @ VGS = - 2.5 V
ID (A)
"9
"7.4
"6.2
"5.2
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8D
7D
6D
5D
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"9
"7.4
"30
1.7
2.5
1.6
- 55 to 150
-8
"8
"6.2
"5.0
"20
- 1.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
N-Channel
Typ Max
38 50
73 95
17 22
P- Channel
Typ Max
40 50
73 95
20 26
Unit
_C/W
www.vishay.com
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4501DY Datasheet

Complementary MOSFET Half-Bridge (N- and P-Channel)

No Preview Available !

Si4501DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "8 V
VDS = 24 V, VGS = 0 V
VDS = - 6.4 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS = - 6.4 V, VGS = 0 V, TJ = 55_C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 4.5 V
VGS = 10 V, ID = 9 A
VGS = - 4.5 V, ID = - 6.2 A
VGS = 4.5 V, ID = 7.4 A
VGS = - 2.5 V, ID = - 5.2 A
VDS = 15 V, ID = 9 A
VDS = - 15 V, ID = - 6.2 A
IS = 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 5 V, ID = 9 A
Qgs
P-Channel
VDS = - 4 V, VGS = - 5 V, ID = - 6.2 A
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = - 4 V, RL = 4 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
IF = 1.7 A, di/dt = 100 A/ms
Min Typa Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
- 0.45
30
- 20
0.015
0.034
0.022
0.048
20
14
0.71
- 0.70
"100
"100
1
-1
5
-5
0.018
0.042
0.027
0.060
1.1
- 1.1
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.5 20
15 25
3.3
nC
3.0
6.6
2.0
13 20
20 40
9 18
50 100
35 50
ns
110 220
17 30
60 120
35 70
60 100
www.vishay.com
2-2
Document Number: 70934
S-61812—Rev. B, 19-Jul-99


Part Number SI4501DY
Description Complementary MOSFET Half-Bridge (N- and P-Channel)
Maker Vishay Siliconix
Total Page 7 Pages
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