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Vishay Intertechnology Electronic Components Datasheet

SI4539ADY Datasheet

N- and P-Channel 30-V (D-S) MOSFET

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Si4539ADY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
rDS(on) (W)
0.036 @ VGS = 10 V
0.053 @ VGS = 4.5 V
0.053 @ VGS = - 10 V
0.090 @ VGS = - 4.5 V
ID (A)
5.9
4.9
- 4.9
- 3.7
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4539ADY
Si4539ADY-T1 (with Tape and Reel)
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 - 30
"20
"20
5.9 4.4 - 4.9 - 3.7
4.7 3.6 - 3.9 - 2.9
30
1.7 0.9 - 1.7 - 0.9
2.0 1.1 2 1.1
1.3 0.7 1.3 0.7
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71131
S-03951—Rev. B, 26-May-03
Symbol
RthJA
RthJF
N-Channel
Typ Max
50 62.5
90 110
32 40
P-Channel
Typ Max
52 62.5
90 110
32 40
Unit
_C/W
www.vishay.com
2-1


Vishay Intertechnology Electronic Components Datasheet

SI4539ADY Datasheet

N- and P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si4539ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55_C
VDS = - 24 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VDS p - 5 V, VGS = - 10 V
VGS = 10 V, ID = 5.9 A
VGS = - 10 V, ID = - 4.9 A
VGS = 4.5 V, ID = 4.9 A
VGS = - 4.5 V, ID = - 3.7 A
VDS = 15 V, ID = 5.9 A
VDS = - 15 V, ID = - 4.9 A
IS = 1.7 A, VGS = 0 V
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 15 V, VGS = 10 V, ID = 5.9 A
Qgs P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 4.9 A
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = - 15 V, RL = 15 W
ID ^ - 1 A, VGEN = - 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
IF = - 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
1.0
- 1.0
V
N-Ch
P-Ch
"100
"100
nA
N-Ch
1
P-Ch
N-Ch
-1
mA
5
P-Ch
-5
N-Ch
P-Ch
30
- 30
A
N-Ch
0.032 0.036
P-Ch
N-Ch
0.043
0.042
0.053
0.053
W
P-Ch
0.075 0.090
N-Ch
P-Ch
15
9
S
N-Ch
P-Ch
0.80
- 0.80
1.2
- 1.2
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.5
5
13 20
15 25
2.3
nC
4
2
2.0
2.2
12.6
W
6 12
7 15
14 25
10 20
30 60
ns
40 80
5 10
20 40
30 60
30 60
www.vishay.com
2-2
Document Number: 71131
S-03951—Rev. B, 26-May-03


Part Number SI4539ADY
Description N- and P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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