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Vishay Intertechnology Electronic Components Datasheet

SI4490DY Datasheet

N-Channel 200-V (D-S) MOSFET

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N-Channel 200-V (D-S) MOSFET
Si4490DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.080 @ VGS = 10 V
0.090 @ VGS = 6.0 V
ID (A)
4.0
3.8
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4490DY
Si4490DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
200
"20
4.0 2.85
3.2 2.3
40
15
2.6 1.3
3.1 1.56
2.0 1.0
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71341
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI4490DY Datasheet

N-Channel 200-V (D-S) MOSFET

No Preview Available !

Si4490DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 4.0 A
VGS = 6.0 V, ID = 4.0 A
VDS = 15 V, ID = 5 A
IS = 2.8 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 100 V, VGS = 10 V, ID = 4.0 A
VDD = 100 V, RL = 25 W
ID ^ 4.0 A, VGEN = 10 V, RG = 6 W
IF = 2.8 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0 V
"100
nA
1
mA
5
40 A
0.065
0.070
19
0.75
0.080
0.090
1.2
W
S
V
34 42
7.5 nC
12.0
0.2 0.85 1.3
W
14 20
20 30
32 50 ns
25 35
70 100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
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Output Characteristics
VGS = 10 thru 6 V
5V
4V
2468
VDS - Drain-to-Source Voltage (V)
10
Transfer Characteristics
40
35
30
25
20
15
10
5
0
0
TC = 125_C
25_C
- 55_
C
123456
VGS - Gate-to-Source Voltage (V)
Document Number: 71341
S-03951—Rev. B, 26-May-03


Part Number SI4490DY
Description N-Channel 200-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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