900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI4473BDY Datasheet

P-Channel 14-V (D-S) MOSFET

No Preview Available !

New Product
P-Channel 14-V (D-S) MOSFET
Si4473BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.011 @ VGS = 4.5 V
14
0.018 @ VGS = 2.5 V
ID (A)
13
10
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATION
D Battery Switch for Portable Devices
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4473BDY—E3 (lLead Free)
Si4473BDY-T1—E3 (Lead Free with Tape and Reel)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 14
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
13 9.8
9.9
7.8
50
2.3
1.34
2.5 1.5
1.6 0.94
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72691
S-32676—Rev. A, 29-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
15
Maximum
50
85
18
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI4473BDY Datasheet

P-Channel 14-V (D-S) MOSFET

No Preview Available !

Si4473BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 14 V, VGS = 0 V
VDS = 14 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 13 A
VGS = 2.5 V, ID = 2.5 A
VDS = 17 V, ID = 13 A
IS = 2.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 10 V, VGS = 4.5 V, ID = 13 A
f = 1 MHz
VDD = 15 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.6
30
1.4
"100
1
10
0.009
0.014
45
0.7
0.011
0.018
1.1
V
nA
mA
A
W
S
V
53 80
11 nC
22
1.5 2.7 4.5 W
55 85
95 145
140 210 ns
140 210
81 120
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 5 thru 3 V
40
2.5 V
30
20
10
0
0
www.vishay.com
2
2V
1.5 V
1234
VDS Drain-to-Source Voltage (V)
5
Transfer Characteristics
50
40
30
20
10
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
3.0
Document Number: 72691
S-32676—Rev. A, 29-Dec-03


Part Number SI4473BDY
Description P-Channel 14-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
PDF Download

SI4473BDY Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI4473BDY P-Channel 14-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy