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Vishay Intertechnology Electronic Components Datasheet

SI3590DV Datasheet

N- and P-Channel 30-V (D-S) MOSFET

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Si3590DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
30
0.077 at VGS = 4.5 V
0.120 at VGS = 2.5 V
P-Channel - 30
0.170 at VGS = - 4.5 V
0.300 at VGS = - 2.5 V
ID (A)
3
2
-2
- 1.2
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra Low RDS(on) N- and P-Channel for High
Efficiency
• Optimized for High-Side/Low-Side
• Minimized Conduction Losses
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices Including PDAs, Cellular Phones and
Pagers
D1 S2
G2
G1
2.85 mm
Ordering Information: Si3590DV-T1-E3 (Lead (Pb)-free)
Si3590DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
10 s Steady State
P-Channel
10 s Steady State
Drain-Source Voltage
VDS 30
- 30
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
3 2.5 - 2 - 1.7
2.3
2.0
- 1.6
- 1.3
Pulsed Drain Current
IDM 8
-8
Continuous Source Current (Diode Conduction)a
IS
1.05
0.75
- 1.05
- 0.75
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.15
0.70
0.83
0.53
1.15
0.70
0.83
0.53
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
N-Channel
Typ.
Max.
93 110
130 150
75 90
P-Channel
Typ.
Max.
93 110
130 150
75 90
Unit
°C/W
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI3590DV Datasheet

N- and P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3590DV
Vishay Siliconix
SPECIFICATIONS TJ = 25°C, unless otherwise noted
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 3 A
VGS = - 4.5 V, ID = - 2 A
VGS = 2.5 V, ID = 2 A
VGS = - 2.5 V, ID = - 1.2 A
VDS = 5 V, ID = 3 A
VDS = - 5 V, ID = - 2 A
IS = 1.05 A, VGS = 0 V
IS = - 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 2 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 4.5 V, ID = - 2 A
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.05 A, dI/dt = 100 A/µs
IF = - 1.05 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
0.6
- 0.6
5
-5
Typ. Max. Unit
0.062
0.135
0.095
0.235
10
5
0.80
- 0.83
1.5
- 1.5
± 100
± 100
1
-1
5
-5
0.077
0.170
0.120
0.300
1.10
- 1.10
V
nA
µA
A
Ω
S
V
3 4.5
3.8 6
0.6
nC
0.6
1.0
1.5
58
58
12 23
15 23
13 23
ns
20 30
7 12
20 30
15 25
18 30
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09


Part Number SI3590DV
Description N- and P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 13 Pages
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