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Vishay Intertechnology Electronic Components Datasheet

SI3588DV Datasheet

N- and P-Channel 20-V (D-S) MOSFET

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New Product
Si3588DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
rDS(on) (W)
0.080 @ VGS = 4.5 V
0.100 @ VGS = 2.5 V
0.128 @ VGS = 1.8 V
0.145 @ VGS = –4.5 V
0.200 @ VGS = –2.5 V
0.300 @ VGS = –1.8 V
ID (A)
3.0
2.6
2.3
–2.2
–1.8
–1.5
D1
D1
S1 G1
D2
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
3.0
2.3
1.05
1.15
0.73
20
"8
2.5 –2.2
2.0 –1.8
"8
0.75
–1.05
0.83
1.15
0.53
0.73
–55 to 150
–20
–0.57
–1.5
–0.75
0.083
0.53
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71332
S-02383—Rev. A, 23-Oct-00
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
93
130
90
Maximum
110
150
90
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI3588DV Datasheet

N- and P-Channel 20-V (D-S) MOSFET

No Preview Available !

Si3588DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS = 16 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 4.5 V
VDS p 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3 A
VGS = 4.5 V, ID = 2.2 A
VGS = 2.5 V, ID = 2.6 A
VGS = 2.5 V, ID = 1.8 A
VGS = 1.8 V, ID = 2.3 A
VGS = 1.8 V, ID = 1.0 A
VDS = 5 V, ID = 3 A
VDS = 5 V, ID = 2.2 A
IS = 1.05 A, VGS = 0 V
IS = 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3 A
Qgs
P-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.2 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
P-Channel
VDD = 4 V, RL = 8 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.05 A, di/dt = 100 A/ms
IF = 1.05 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.45
0.45
5
5
0.064
0.115
0.080
0.163
0.104
0.240
9
5
0.8
0.8
"100
"100
1
1
10
10
0.080
0.145
0.100
0.200
0.128
0.300
1.1
1.1
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5 7.5
5 7.5
0.65
1.0
nC
0.9
0.9
12 20
12 20
30 50
29 50
28 50
ns
24 45
12 20
30 50
20 40
20 40
www.vishay.com
2
Document Number: 71332
S-02383Rev. A, 23-Oct-00


Part Number SI3588DV
Description N- and P-Channel 20-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 7 Pages
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