900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Vishay Intertechnology Electronic Components Datasheet

SI3552DV Datasheet

N- and P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3552DV
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 30 0.105 at VGS = 10 V
0.175 at VGS = 4.5 V
P-Channel
- 30 0.200 at VGS = - 10 V
0.360 at VGS = - 4.5 V
ID (A)
2.5
2.0
- 1.8
- 1.2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
D1
S1
D2
D1 S2
G2
G1
2.85 mm
Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free)
Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 30 - 30
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
2.5 - 1.8
2.0 - 1.2
Pulsed Drain Current
IDM 8
-7
Continuous Source Current (Diode Conduction)a, b
IS 1.05 - 1.05
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
1.15
0.73
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t5s
Steady State
Maximum Junction-to-Lead
Steady State
Notes:
a. Surface Mounted on FR4 board.
b. t 5 s.
Symbol
RthJA
RthJL
Typical
93
130
75
Maximum
110
150
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI3552DV Datasheet

N- and P-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3552DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
RDS(on)
gfs
VSD
VDS = 24 V, VGS = 0 V
VDS = - 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55 °C
VDS = - 24 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 2.5 A
VGS = - 10 V, ID = - 1.8 A
VGS = 4.5 V, ID = 2.0 A
VGS = - 4.5 V, ID = - 1.2 A
VDS = 10 V, ID = 2.5 A
VDS = - 15 V, ID = - 1.8 A
IS = 1.05 A, VGS = 0 V
IS = - 1.05 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel
VDS = 15 V, VGS = 5 V, ID = 1.8 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.05 A, dI/dt = 100 A/µs
IF = - 1.05 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
1.0
- 1.0
5
-5
0.5
3
Typ. Max. Unit
0.085
0.165
0.140
0.298
4.3
2.4
0.81
- 0.83
± 100
± 100
1
-1
5
-5
0.105
0.200
0.175
0.360
1.10
- 1.10
V
nA
µA
A
Ω
S
V
2.1 3.2
2.4 3.6
0.7
nC
0.9
0.7
0.8
2.4
Ω
11
7 11
8 12
9 14
12 18
13 20
12 18 ns
58
7 11
35 60
30 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70971
S09-2110-Rev. C, 12-Oct-09


Part Number SI3552DV
Description N- and P-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 12 Pages
PDF Download

SI3552DV Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SI3552DV N- and P-Channel 30-V (D-S) MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy