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Vishay Intertechnology Electronic Components Datasheet

SI3435DV Datasheet

P-Channel 12-V (D-S) MOSFET

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P-Channel 12-V (D-S) MOSFET
Si3435DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.036 @ VGS = - 4.5 V
- 12 0.050 @ VGS = - 2.5 V
0.073 @ VGS = - 1.8 V
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
ID (A)
- 6.3
- 5.3
- 4.4
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 6.3 - 4.8
- 4.6 - 3.4
- 20
- 1.7 - 0.9
2.0 1.1
1.0 0.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71318
S-03371—Rev. B, 03-Mar-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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Vishay Intertechnology Electronic Components Datasheet

SI3435DV Datasheet

P-Channel 12-V (D-S) MOSFET

No Preview Available !

Si3435DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 85_C
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.3 A
VGS = - 2.5 V, ID = - 5.3 A
VGS = - 1.8 V, ID = - 2 A
VDS = - 5 V, ID = - 6.3 A
IS = - 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = - 6 V, VGS = - 4.5 V, ID = - 6.3 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
- 0.45
- 20
0.030
0.042
0.060
15
- 0.7
"100
-1
-5
0.036
0.050
0.073
- 1.2
V
nA
mA
A
W
S
V
15 23
3 nC
3.3
18 36
45 90
90 180 ns
80 160
30 50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2.5 V
16
2V
12
8
1.5 V
4
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
TC = - 55_C
16 25_C
12
125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Document Number: 71318
S-03371—Rev. B, 03-Mar-03


Part Number SI3435DV
Description P-Channel 12-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 5 Pages
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