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SI3434DV Datasheet

N-Channel 30-V (D-S) MOSFET

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New Product
N-Channel 30-V (D-S) MOSFET
Si3434DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.034 @ VGS = 4.5 V
0.050 @ VGS = 2.5 V
ID (A)
6.1
5.0
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rating for 30-V N-Channel
D Low rDS(on) for Footprint Area
APPLICATIONS
D Li-lon Battery Protection
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
6.1 4.6
4.9 3.6
30
1.7 1.0
2.0 1.14
1.3 0.73
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71610
S-03617—Rev. A, 17-Apr-01
Symbol
RthJA
RthJF
Typical
40
90
25
Maximum
62.5
110
30
Unit
_C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

SI3434DV Datasheet

N-Channel 30-V (D-S) MOSFET

No Preview Available !

Si3434DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "12 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 6.1 A
VGS = 2.5 V, ID = 2 A
VDS = 10 V, ID = 6.1 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 6.1 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6 V
"100
nA
1
mA
5
30 A
0.028
0.042
20
0.8
0.034
0.050
1.2
W
S
V
8 12
1.9 nC
2.6
21 40
45 90
40 80 ns
30 60
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
VGS = 10 thru 3.5 V
3V
24
30
24
18 18
2.5 V
12 12
6 2V
1.5 V
0
012345
VDS Drain-to-Source Voltage (V)
6
0
0
Transfer Characteristics
TC = 55_C
25_C
125_C
123
VGS Gate-to-Source Voltage (V)
4
www.vishay.com
2
Document Number: 71610
S-03617Rev. A, 17-Apr-01


Part Number SI3434DV
Description N-Channel 30-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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