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SI3430DV Datasheet

N-Channel 100-V (D-S) MOSFET

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N-Channel 100-V (D-S) MOSFET
Si3430DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.170 @ VGS = 10 V
0.185 @ VGS = 6.0 V
ID (A)
2.4
2.3
3 mm
TSOP-6
Top View
16
25
34
2.85 mm
Ordering Information: Si3430DV-T1
FEATURES
D High-Efficiency PWM Optimized
D 100% Rg Tested
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IAR
EAR
IS
PD
TJ, Tstg
100
"20
2.4 1.8
1.7 1.3
8
6
1.8
1.7 1.0
2.0 1.14
1.0 0.59
- 55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71235
S-31725—Rev. B, 18-Aug-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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1


Vishay Intertechnology Electronic Components Datasheet

SI3430DV Datasheet

N-Channel 100-V (D-S) MOSFET

No Preview Available !

Si3430DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 2.4 A
VGS = 6.0 V, ID = 2.3 A
VDS = 15 V, ID = 2.4 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Rg
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 10 V, ID = 2.4 A
ID
^
V1DAD,
= 50 V,
VGEN =
R1L0
= 50 W
V, RG =
6
W
VGS = 0.1 V, f = 5 MHz
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
2V
"100
1
25
nA
mA
8A
0.148
0.160
7
0.8
0.170
0.185
1.2
W
S
V
5.5 6.6
1.5 nC
1.4
1 4W
9 20
11 20
16 30 ns
9 20
2.8 W
50 80 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
8
VGS = 10 thru 6 V
Output Characteristics
6
5V
8
6
Transfer Characteristics
4
2
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
4
TC = 125_C
2
25_C
- 55_C
0
0123456
VGS - Gate-to-Source Voltage (V)
Document Number: 71235
S-31725—Rev. B, 18-Aug-03


Part Number SI3430DV
Description N-Channel 100-V (D-S) MOSFET
Maker Vishay Siliconix
Total Page 4 Pages
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