VS-10ETS12S-M3 - High Voltage Surface Mount Input Rectifier Diode
Vishay
Download the VS-10ETS12S-M3 datasheet PDF.
This datasheet also covers the VS-10ETS08S-M3 variant, as both devices belong to the same high voltage surface mount input rectifier diode family and are provided as variant models within a single manufacturer datasheet.
General Description
The VS-10ETS..S-M3 rectifier series has been optimized for very low forward voltage drop, with moderate leakage.
The glass passivation technology used has reliable operation up to 150 °C junction temperature.
Key Features
Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C.
Glass passivated pellet chip junction.
Designed and qualified according to
JEDEC®-JESD 47.
Material categorization: for definitions of compliance
please see www. vishay. com/doc?99912.
Full PDF Text Transcription for VS-10ETS12S-M3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VS-10ETS12S-M3. For precise diagrams, and layout, please refer to the original PDF.
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A 2 1 3 D2PAK (TO-263AB) B...
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age Surface Mount Input Rectifier Diode, 10 A 2 1 3 D2PAK (TO-263AB) Base cathode 2 1 Anode 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM TJ max. Package 10 A 800 V, 1000 V, 1200 V 1.1 V 160 A 150 °C D2PAK (TO-263AB) Circuit configuration Single FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Input rectification • Vishay switches and output rectifiers which are available in identical package o
VS-10ETS12S-M3 Datasheet
