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VS-10ETS10S-M3 - High Voltage Surface Mount Input Rectifier Diode

This page provides the datasheet information for the VS-10ETS10S-M3, a member of the VS-10ETS08S-M3 High Voltage Surface Mount Input Rectifier Diode family.

Description

The VS-10ETS..S-M3 rectifier series has been optimized for very low forward voltage drop, with moderate leakage.

The glass passivation technology used has reliable operation up to 150 °C junction temperature.

Features

  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VS-10ETS10S-M3
Manufacturer Vishay
File Size 185.68 KB
Description High Voltage Surface Mount Input Rectifier Diode
Datasheet download datasheet VS-10ETS10S-M3 Datasheet
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VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A 2 1 3 D2PAK (TO-263AB) Base cathode 2 1 Anode 3 Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM TJ max. Package 10 A 800 V, 1000 V, 1200 V 1.1 V 160 A 150 °C D2PAK (TO-263AB) Circuit configuration Single FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Input rectification • Vishay switches and output rectifiers which are available in identical package outlines DESCRIPTION The VS-10ETS..
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