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VS-10ETS12-M3 - Input Rectifier Diode

This page provides the datasheet information for the VS-10ETS12-M3, a member of the VS-10ETS08-M3 Input Rectifier Diode family.

Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

These devices are intended for use in main rectification (single or three phase bridge).

Features

  • Very low forward voltage drop.
  • 150 °C max. operating junction temperature.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet preview – VS-10ETS12-M3

Datasheet Details

Part number VS-10ETS12-M3
Manufacturer Vishay
File Size 175.98 KB
Description Input Rectifier Diode
Datasheet download datasheet VS-10ETS12-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VS-10ETS...-M3 Series Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A 2 1 3 TO-220AC 2L Base cathode 2 1 3 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM TJ max. Package 10 A 800 V to 1200 V 1.1 V 160 A 150 °C TO-220AC 2L Circuit configuration Single FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.
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