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SiZF914DT
Vishay Siliconix
Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky
• G1 return/S1 pin for enhancing high side driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
25 25
0.00380
0.00090
0.00620
0.00150
6.
SiZF914DT Datasheet
