* TrenchFET® Gen IV power MOSFET
* 45 V Drain-source break-down voltage
* Tuned for low Qg and Qoss
* 100 % Rg and UIS tested
* Material categorizatio.

D
* Synchronous rectification
* High power density DC/DC
* Motor drive control G S N-Channel MOSFET O.

SiDR626EP

SiDR680ADP

SID04N60-C

SID04N65SL

SID05N10

SID05N60J

SID1003

SID1003BQ

SID1010CM

SID1010CXM

SID1050CM

SID1112K

SID1132K

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