SiDR608EP Datasheet, Vishay

* TrenchFET® Gen IV power MOSFET
* 45 V Drain-source break-down voltage
* Tuned for low Qg and Qoss
* 100 % Rg and UIS tested
* Material categorizatio.

D
* Synchronous rectification
* High power density DC/DC
* Motor drive control G S N-Channel MOSFET O.